Out-diffusion and reactivation of Zn in InP substrates
- 10 September 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (19) , 1010-1011
- https://doi.org/10.1049/el:19870708
Abstract
The influence of temperature on p-doping in Zn-diffused InP substrates has been investigated. By cooling the diffused InP samples very slowly after diffusion or subjecting them to heat treatment, significant out-diffusion of Zn has been observed. By heat-treating with rapid cooling, a substantial fraction of the incorporated but electrically inactive Zn atoms can be reactivated, resulting in a drastically increased acceptor concentration.Keywords
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