Growth of rare-earth single crystals by molecular beam epitaxy: The epitaxial relationship between hcp rare earth and bcc niobium
- 11 August 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (6) , 319-321
- https://doi.org/10.1063/1.97155
Abstract
High‐quality rare‐earth (RE) single‐crystal films of yttrium (Y) and gadolinium (Gd) were successfully grown with the metal molecular beam epitaxy technique on a bcc Nb single‐crystal film which serves as a buffer layer to the sapphire substrates. With reflection high‐energy electron diffraction, the hcp RE (0001) was found to grow epitaxially on the (110) Nb in the Nishiyama–Wasserman orientation. The regrowth of Nb on this RE (0001) surface yielded the (110) orientation with 120° in‐plane domains. These epitaxial relationships suggest the possibility of fabricating an ultrathin, coherent crystalline superlattice in the Nb (110)/ RE (0001) system.Keywords
This publication has 7 references indexed in Scilit:
- Observation of a Magnetic Antiphase Domain Structure with Long-Range Order in a Synthetic Gd-Y SuperlatticePhysical Review Letters, 1986
- Magnetic and Structural Properties of Single-Crystal Rare-Earth Gd-Y SuperlatticesPhysical Review Letters, 1985
- Nb-Ta metal superlatticesJournal of Physics F: Metal Physics, 1981
- New Class of Layered MaterialsPhysical Review Letters, 1980
- Geometric factors in f.c.c. and b.c.c. metal-on-metal epitaxy III. The alignments of (111) f.c.c.-(110) b.c.c. epitaxed metal pairsPhilosophical Magazine A, 1978
- Interfacial and morphological effects in the epitaxial growth of iron on silverActa Metallurgica, 1973
- Application of electron-transparent (111) silver platelets as substrates in epitaxial studiesJournal of Applied Physics, 1973