Localized substrate heating during ion implantation
- 1 January 1978
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science and Technology
- Vol. 15 (1) , 111-115
- https://doi.org/10.1116/1.569416
Abstract
The enhanced etching of ion‐implanted silicon nitride in buffered hydrofluoric acid has been studied as a function of beam current in an ion implantation system using rotating mechanical scan. Reduction of the enhancement due to annealing has been observed under conditions where an earlier model of target heating during ion implantation would predict no annealing. The implication of this observation for future beam heating calculations is explored briefly.Keywords
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