The effect of stress relief on magnetic distributions in ion-implanted garnet films

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Abstract
Magnetization distributions around a circular nonimplanted disk in an ion-implanted garnet film are calculated through numerical integration of the Landau–Lifshitz–Gilbert equation. In addition to uniform stress-induced in-plane anisotropy in the implanted region, the effect of stress relief near the edge of nonimplanted disk is taken into account. Calculation results show that magnetization distributions are strongly affected by the stress distribution near the edge not only in the region close to the implantation edge where charged walls are formed but also in the region rather far away from the edge. With proper choice of stress distribution, the present calculation can reproduce the ‘‘propeller-like’’ domain wall pattern which is experimentally observed by the Bitter technique. This suggests that the stress distribution near the implantation edge might be determined by comparing calculation results of magnetization distributions with experimental observations of domain wall pattern.