Dopant segregation in silicon by pulsed-laser annealing: A test case for the concept of thermal melting
- 12 November 1979
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 74 (3-4) , 253-255
- https://doi.org/10.1016/0375-9601(79)90786-2
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Differences between ruby and Nd:YAG laser annealing of ion implanted siliconPhysics Letters A, 1979
- Segregation Effects in Cu-Implanted Si after Laser-Pulse MeltingPhysical Review Letters, 1978
- Diffusion Coefficients of Impurities in Silicon MeltJapanese Journal of Applied Physics, 1963
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960
- The redistribution of solute atoms during the solidification of metalsActa Metallurgica, 1953