Ferromagnetic Order Induced by Photogenerated Carriers in Magnetic III-V Semiconductor Heterostructures of (In,Mn)As/GaSb

We report the inducement of a ferromagnetic order by photogenerated carriers in a novel III-V–based magnetic semiconductor heterostructure $p$-(In,Mn)As/GaSb grown by molecular beam epitaxy. At low temperatures $(<35\mathrm{}\mathrm{K})$, samples preserve ferromagnetic order even after the light is switched off, whereas they recover their original paramagnetic condition above 35 K. The results are explained in terms of hole transfer from GaSb to InMnAs in the heterostructure, which enhances a ferromagnetic spin exchange among Mn ions in the InMnAs layer.