Copper indium diselenide based thin-film transistors
- 14 October 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (16) , 1990-1991
- https://doi.org/10.1063/1.106159
Abstract
Thin‐film transistors have been fabricated with the compound semiconductor CuInSe2. The fabrication process uses soda‐lime glass substrates and deposition conditions for CuInSe2 which result in near‐intrinsic material. The devices are of the insulated‐gate field‐effect transistor configuration and operate in both p‐ and n‐channel modes. Effective mobilities of 3.4 and 13 cm2/V s were measured for holes and electrons, respectively, indicating high potential for use of the technology in display applications.Keywords
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