Schottky-barrier height of In 0.43 Al 0.57 As
- 14 August 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (17) , 890-892
- https://doi.org/10.1049/el:19860607
Abstract
The Schottky-barrier height of n-type In0 43Al0.57As grown by molecular-beam epitaxy on (100)-oriented n-type InP substrates measured by capacitance/voltage and internal photoemission measurements is φBn = 1.2 ± 0.1 eV, comparable to that of AlAs and substantially larger than that of In0.52Al0.48As.Keywords
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