Distributed Bragg reflector Pb1−xSnxSe/Pb1−xyEuySnxSe diode lasers with a broad single-mode tuning range

Abstract
Distributed Bragg reflector Pb1−xSnxSe/Pb1−xyEuySnxSe double heterostructure stripe geometry diode lasers were fabricated using molecular‐beam epitaxy. Single‐mode cw operation at about 7.8 μm was obtained for heat‐sink temperatures in the range 25–75 K. the single‐mode continuous tuning range was 10 cm1. Tuning the diodes via the injection current, a range of 24 cm1 was completely covered with single‐mode emission. The reason for this wide tuning range was mode hopping to lower frequencies rather than the usual hopping to higher frequencies.

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