Mechanism for bistability in organic memory elements
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- 26 January 2004
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (4) , 607-609
- https://doi.org/10.1063/1.1643547
Abstract
We demonstrate that the resistive switching phenomenon observed in organic semiconductor layers containing granular metal particles conforms to a charge storage mechanism described by Simmons and Verderber [Proc. R. Soc. A 391, 77 (1967)]. The space-charge field due to the stored charge inhibits further charge injection from the electrodes. The equilibrium current–voltage curve is N shaped and the low and high resistance states are obtained by applying voltage close to the local maximum and minimum, respectively.Keywords
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