A submicron NMOS technology suitable for low power high speed circuits

• 1 January 1985
• proceedings article
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• p. 264-267
• https://doi.org/10.1109/iedm.1985.190947

Abstract

Keywords

• DEGRADATION
• RING OSCILLATOR
• HOT CARRIERS
• POWER DISSIPATION
• VOLTAGE