Infrared absorption band for substitutional nitrogen in silicon
- 15 December 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (12) , 1339-1341
- https://doi.org/10.1063/1.96273
Abstract
Formation and annealing characteristics for an infrared absorption band at 653 cm−1 in 14N-implanted Si have been correlated with those for a distorted substitutional N center identified previously in electron paramagnetic resonance studies. It is concluded from this correlation and the observed frequency shift upon isotopic substitution of 15N that the 653 cm−1 band is a localized vibrational mode for substitutional 14N in Si.Keywords
This publication has 3 references indexed in Scilit:
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- Deep-level nitrogen centers in laser-annealed ion-implanted siliconPhysical Review B, 1982
- Ion-implanted nitrogen in gallium arsenideJournal of Applied Physics, 1973