Complementary silicon MESFET technology

26 February 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (5) , 205-206
https://doi.org/10.1049/el:19870144

Abstract

Prototype complementary silicon MESFET inverters and rign oscillators were fabricated. N-channel transistors have platinum gates and erbium source and drain contacts, while for the p-channel devices the roles of the two metals are reversed. Silicon-on-sapphire substrates were used to provide good device isolation and realisation of normally-off operation.

Keywords

MONOLITHIC IC
SI-AL2O3
ER SOURCE CONTACTS
INVERTERS
SOS SUBSTRATES
MESFET TECHNOLOGY
PT GATES
RING OSCILLATORS
DEVICE ISOLATION
DRAIN CONTACTS
COMPLEMENTARY TYPE
ELEMENTAL SEMICONDUCTORS

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