Measurement and modeling of the fast collapse of HgCdTe metal-insulator-semiconductor devices

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Abstract
Hg1−xCdxTe metal-insulator-semiconductor (MIS) devices with x≂0.22 often exhibit very short storage times that are determined by minority-carrier dark currents. This study describes a novel system, for measuring the fast collapse of such devices. The measurement and modeling of the dark current during the fast collapse process is presented. A quantitative correlation is noticeable between the experimental results and theoretical calculations which assume that thermal-trap-assisted tunneling is the dominant dark process. The results demonstrate the importance of trap-assisted tunneling in narrow band-gap HgCdTe, and that this process causes short storage times.

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