Zone-melting-recrystallization silicon-on-insulator technology
- 1 July 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Circuits and Devices Magazine
- Vol. 3 (4) , 12-16
- https://doi.org/10.1109/MCD.1987.6323127
Abstract
The author describes the zone-melting recrystallization (ZMR) technique and the crystallographic properties of silicon-on-insulator (SOI) films. He reviews the devices and circuits fabricated in these films, discusses their radiation hardness, and considers the prospects of the graphite-strip-heater technology for achieving commercialization.Keywords
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