Tunneling currents via Au levels in Ge Esaki diodes

1 June 1967

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 55 (6) , 1105-1106
https://doi.org/10.1109/PROC.1967.5750

Abstract

Esaki diodes have been fabricated on n-type Ge diffused with Au. A hump is observed in the valley of the I-V characteristics due to two-step interactions with the Au levels.

Keywords

TUNNELING
GOLD
SCHOTTKY DIODES
SEMICONDUCTOR DIODES
CUTOFF FREQUENCY
GALLIUM ARSENIDE
SEMICONDUCTOR MATERIALS
ELECTRICAL RESISTANCE MEASUREMENT
CONTACT RESISTANCE
FREQUENCY ESTIMATION

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