Frequency limits of GaAs and InP field-effect transistors

1 June 1975

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 22 (6) , 357-358
https://doi.org/10.1109/T-ED.1975.18139

Abstract

Monte Carlo calculations of electron transport in InP and GaAs short-channel field-effect transisters (FET's) show that a significant departure from the equilibrium velocity-field curve occurs in these devices. On the basis of these calculations, InP FET's should have high-frequency performance superior to that of GaAs FET's only for effective channel lengths in excess of 1.5 µ.

Keywords

FREQUENCY
GAAS
EQUILIBRIUM
INP
TRANSISTORS
CURVE
SUPERIOR
MONTE
CARLO
TRANSISTERS