Dependence of InAs phonon energy on misfit-induced strain
- 20 December 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (25) , 3434-3436
- https://doi.org/10.1063/1.110137
Abstract
The transverse‐optical (TO) phonon energy in strained InAs quantum wells has been investigated by using far‐infrared absorption. We observe that the TO phonon energy decreases when the misfit‐induced biaxial tension in the InAs single quantum well is increased. Our result shows a stronger phonon energy dependence on the strain than the one reported by Cerdeira et al. [Phys. Rev. B 5, 580 (1972)]. The discrepancy may be explained by stress relaxation near the surface in their experiment. The application of our result will be discussed.Keywords
This publication has 15 references indexed in Scilit:
- Accurate determination of effective quantum well thickness: Infrared absorption by transverse-optical phononsApplied Physics Letters, 1992
- Phonons in GaAs-AlxGa1−xAs superlatticesJournal of Luminescence, 1989
- Raman phonon piezospectroscopy in GaAs: Infrared measurementsPhysical Review B, 1987
- Phonons in semiconductor superlatticesIEEE Journal of Quantum Electronics, 1986
- Comment on "Resonance Raman Scattering by Confined LO and TO Phonons in GaAs-AlAs Superlattices"Physical Review Letters, 1986
- Folded acoustic and quantized optic phonons in (GaAl)As superlatticesPhysical Review B, 1985
- Dependence of Raman frequencies and scattering intensities on pressure in GaSb, InAs, and InSb semiconductorsPhysical Review B, 1984
- Study of zone-folding effects on phonons in alternating monolayers of GaAs-AlAsPhysical Review B, 1978
- Raman scattering and zone-folding effects for alternating monolayers of GaAs-AlAsApplied Physics Letters, 1977
- Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type SemiconductorsPhysical Review B, 1972