The collection of ions implanted in semiconductors. I. saturation effects

1 September 1972

journal article
research article
Published by Taylor & Francis in Radiation Effects

Vol. 16 (1-2) , 101-105
https://doi.org/10.1080/00337577208232027

Abstract

The collection of energetic ions of Kr and Tl in Si, Ge, GaP and GaAs has been studied as a function of ion dose and energy (up to 30 keV) using radioactive ions and assay techniques for measurement. Build-up rates and saturation levels have been established for the various combinations of incident ion, incident energy and target material. The rates of build-up are monotonic and level off to a constant saturation concentration. No evidence was found for the oscillatory (factor ∼ 2) departure from saturation level observed by Tinsley and coworkers for 20 and 60 keV Bi in GaAs.

Keywords

This publication has 1 reference indexed in Scilit:

Anomalously high collection of copper ions implanted in aluminium
Physica Status Solidi (a), 1971