On the temperature dependence of the energy gap in PbSe and PbTe
- 2 April 1990
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 2 (13) , 2935-2940
- https://doi.org/10.1088/0953-8984/2/13/003
Abstract
A detailed temperature dependence of the energy gap E0 in the PbSe and PbTe was obtained from the transmittance measurements. A non-linear change of E0 in the vicinity of the Debye temperature was noticed. An attempt to find an empirical formula describing the experimental dependence E0(T) led to the conclusion that the non-linear change can be attributed to the electron interaction with the optical phonons.Keywords
This publication has 9 references indexed in Scilit:
- Infrared absorption of laser deposited PbSe filmsJournal of Physics C: Solid State Physics, 1987
- Laser-assisted sputtering of Pb1−x Cd x Se filmsJournal of Materials Science Letters, 1986
- Reststrahlen spectra of PbSe1−xTex)Physica Status Solidi (b), 1979
- Pressure and temperature dependence of electronic energy levels in PbSe and PbTePhysical Review B, 1975
- Electronic charge densities in PbSe and PbTePhysical Review B, 1975
- Electronic structure of PbSe and PbTe. I. Band structures, densities of states, and effective massesPhysical Review B, 1975
- Temperature Dependence of the HgTe Band GapPhysical Review B, 1973
- Calculation of the Temperature Dependence of the Energy Gaps in PbTe and SnTePhysical Review B, 1971
- Debye-Waller Factors and the PbTe Band-Gap Temperature DependencePhysical Review B, 1970