Metal-free chemically amplified positive resist resolving 0.2 μm in x-ray lithography

Abstract
A chemically amplified positive resist (EXP) and its processing have been optimized for high resolution in x-ray lithography. EXP is composed of a novolak resin, 2,2-bis(t-butoxycarbonyloxyphenyl)-propane as a dissolution inhibitor, and bis(p-t-butylphenyl)iodonium trifluoromethanesulfonate as an acid generator. Sensitivity and resolution characteristics were greatly influenced by post-exposure baking (PEB) conditions. Applying PEB at 65 °C for 60 s resulted in the successful fabrication of 0.2-μm patterns in a 1.3-μm-thick EXP film. The pattern width remained virtually unchanged during a three-hour holding time between x-ray exposure and PEB. The exposure latitude for ±10% width change for 0.2 μm holes was about 10%.

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