Effects of Phosphorus Implantation and Post Annealing on Palladium Silicide Schottky Barrier Diode Characteristics
- 1 October 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (10R)
- https://doi.org/10.1143/jjap.23.1345
Abstract
Schottky barrier diodes were fabricated on silicon surfaces whose impurity concentrations were controlled by ion implantation of phosphorus. The barriers were produced by Pd2Si. The forward voltages of these Schottky barrier diodes showed far greater lowering than predicted for implanted doses of 5×1013 cm-2 and higher. This was due to the reduction in the effective barrier height caused by accumulation of the phosphorus atoms at the Pd2Si–Si interface during the formation of the Pd2Si. This lowering is enhanced by post annealing after the formation of the Pd2Si.Keywords
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