Avalanche breakdown-related electroluminescence in single crystal Si:Er:O
- 6 October 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (14) , 1930-1932
- https://doi.org/10.1063/1.119984
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Electroluminescence of erbium–oxygen-doped silicon diodes grown by molecular beam epitaxyApplied Physics Letters, 1996
- Materials issues and device performances for light emitting Er-implanted SiNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995
- Room-temperature sharp line electroluminescence at λ=1.54 μm from an erbium-doped, silicon light-emitting diodeApplied Physics Letters, 1994
- Room-temperature electroluminescence from Er-doped crystalline SiApplied Physics Letters, 1994
- Optical activation and excitation mechanisms of Er implanted in SiPhysical Review B, 1993
- The mechanisms of electronic excitation of rare earth impurities in semiconductorsSemiconductor Science and Technology, 1993
- Ic Compatible Processing of Si:Er for optoelectronicsMRS Proceedings, 1993
- Impurity enhancement of the 1.54-μm Er3+ luminescence in siliconJournal of Applied Physics, 1991
- 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxyApplied Physics Letters, 1985
- 1.54-μm luminescence of erbium-implanted III-V semiconductors and siliconApplied Physics Letters, 1983