Implantation damage and its effect on channelling
- 1 November 1993
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 24 (7) , 811-817
- https://doi.org/10.1016/0026-2692(93)90025-a
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- An Improved Approach to Accurately Model Shallow B and BF 2 Implants in SiliconJournal of the Electrochemical Society, 1989
- Two-dimensional modeling of ion implantation induced point defectsIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988