Abstract
We report more than one order of magnitude (∼18 times) enhancement in the AlAs etching rate in a GaAs epitaxial lift‐off technique compared with that at 0°C reported previously. This has been achieved by optimizing various physical parameters such as pressure and temperature, and by adding a surfactant and antifoaming agent to the HF solution. The sapphire plate on which the sample is adhered is useful in further processing. Thus, lifted‐off GaAs/AlGaAs double heterostructures exhibit good luminescence characteristics compared to the as‐grown samples. © 1999 The Electrochemical Society. All rights reserved.