MINIMOS 3: A MOSFET simulator that includes energy balance
- 1 May 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (5) , 1074-1078
- https://doi.org/10.1109/T-ED.1987.23047
Abstract
We present a model for hot carrier transport which is implemented in the device simulator MINIMOS 3. A brief resume of the model is given. We present various results which were calculated with this new model. We show that the I-V characteristics of a MOSFET can be calculated from Leff= 10 µm down to Leff= 0.9 µm with one parameter set. Modifications of carrier and current distributions are presented that show how hot carrier effects tend to smooth these distributions. Implications are discussed how a self-consistent carrier temperature can be used to model impact ionization and oxide injection.Keywords
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