Finite-element methods in semiconductor device simulation
- 1 August 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 24 (8) , 1082-1089
- https://doi.org/10.1109/T-ED.1977.18880
Abstract
Application of the finite-element method for continuous time-dependent media to two-dimensional semiconductor device simulation is described. It is shown that this method guarantees exact conservation of current both locally and at the device terminals. Finite-element forms of Poisson's equation and the electron and hole current continuity equations are derived. Implementation of second order (linear triangular elements) and fourth order (Hermite bicubic elements) methods is discussed.Keywords
This publication has 0 references indexed in Scilit: