Analyses of Noise in a Highly Sensitive Image Device
- 1 February 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (2R)
- https://doi.org/10.1143/jjap.28.178
Abstract
A dipole charge-discharge (i.e., DCD) model was proposed to explain the excess noise factor (i.e., θ) of an amorphous selenium APD target below unity beyond the theoretical limit of shot noise. If the dipole distribution between stored holes and electrons is proper, the electric field in the target is formed between storage periods without interfering with the reading-writing mechanism for the signal, and can control the number of stored carriers so that θ becomes smaller than unity. The theoretical relationship between the signal (i.e., I s) and was obtained and could explain the experimental value well. The theoretical photoelectric conversion characteristics were obtained, and agreed with the experimental values obtained at a high illumination intensity. The magnitude of the negative lag was calculated and was in good agreement with the experimental value.Keywords
This publication has 3 references indexed in Scilit:
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- An avalanche-mode amorphous Selenium photoconductive layer for use as a camera tube targetIEEE Electron Device Letters, 1987
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