Resistance bi-stability in resonant tunneling diode pillar arrays
- 6 March 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (10) , 1234-1236
- https://doi.org/10.1063/1.113247
Abstract
We have fabricated and characterized resonant tunneling diode pillar arrays. The array resistance switches between two stable states with a maximum room temperature current peak to valley ratio of 500:1. Both the high and the low resistance states are stable at zero bias suggesting that the device may be used for non‐volatile memory storage.Keywords
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