Stoichiometry and doping in large gap compound semiconductors
- 1 January 1980
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 15 (3) , 707-710
- https://doi.org/10.1051/rphysap:01980001503070700
Abstract
Current theoretical models on self-compensation in large gap semiconductors assume that intrinsic stoichiometric defects dominate and explain electrical properties quite satisfactorily without any contribution from impurities. Some recent results show on the contrary that impurities are in fact dominant at least at room temperature. The paper, starting from one particular material (ZnTe), is an attempt to understand the real physico-chemistry of self-compensation and the reasons for the success of simplified theories assuming the crystal to be very pureKeywords
This publication has 2 references indexed in Scilit:
- Behaviour of copper in ZnTe : SEM-CL and PLSolid State Communications, 1979
- Carrier Mobility and Shallow Impurity States in ZnSe and ZnTePhysical Review B, 1963