On the structure of fluorine defects in amorphous and crystalline silicon studied by hyperfine interaction and channeling methods

1 January 1981

proceedings article
Published by AIP Publishing in AIP Conference Proceedings

Vol. 73 (1) , 111-116
https://doi.org/10.1063/1.33084

Abstract

DPAD results on a‐Si:F reveal a unique amorphous, fluorine site stemming from 48% of the fluorine records. This component is also observed in crystalline Si:F with a population of 25% together with a second unique, ’’crystalline’’, component with a population of 40%. In a‐Si:F the amorphous component is independent of temperature (80–900 K) whereas in crystalline Si:F it anneals at 700 K in favour of the crystalline component. Although the DPAD results indicate a unique orientation component of the F‐orbitals in crystalline Si:F a specific lattice location could not be revealed in preliminary channeling experiments.

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