Influence of different growth techniques on the quality of GaInAs-InP quantum well structures grown by adduct-MOVPE
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 347-352
- https://doi.org/10.1016/0022-0248(88)90551-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Systematics of laser operation in GaAs/AlGaAs multiquantum well heterostructuresIEEE Journal of Quantum Electronics, 1987
- InP, GaInAs and quantum well structures grown by adduct MOVPEJournal of Crystal Growth, 1986
- Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44<x<0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor depositionJournal of Applied Physics, 1983
- LPE Growth of Misfit Dislocation‐Free Thick In1 − x Ga x As Layers on InPJournal of the Electrochemical Society, 1980