Modal ranges of 400 - 1800 keV4He+ions in si measured via blistering
- 1 January 1981
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 57 (1-2) , 41-44
- https://doi.org/10.1080/01422448008218680
Abstract
The 0.4–1.8 MeV4 He+ modal ranges in silicon have been determined by studying the blistering phenomenon using profilometer techniques. The modal ranges deduced agree with those obtained through the Monte-Carlo calculations.Keywords
This publication has 5 references indexed in Scilit:
- Self-diffusion in silicon as probed by the ( p,γ) resonance broadening methodApplied Physics Letters, 1979
- Investigation of 28Si levels with the (α, γ) and (p, γ) reactionsNuclear Physics A, 1978
- Correlation between blister skin thickness, the maximum in the damage-energy distribution, and projected ranges of He+ ions in metals: NbApplied Physics Letters, 1975
- Range-Energy Relation for Low-Energy Alpha Particles in Si, Ge, and InSbPhysical Review B, 1956
- On the permeation of hydrogen and helium in single crystal silicon and germanium at elevated temperaturesPhysica, 1956