On the Origin of an Energy Gap in Semiconducting Mixed-Valent Rare-Earth Compounds
- 15 November 1992
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 61 (11) , 3841-3844
- https://doi.org/10.1143/jpsj.61.3841
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Band Calculations on YbB12, SmB6and CeNiSnProgress of Theoretical Physics Supplement, 1992
- Semiconducting properties of the isomorphous compounds, Ce3Au3Sb4 and Ce3Pt3Sb4Solid State Communications, 1991
- Electronic Band Structure of Th3Ni3Sb4and Th3X4(X=P, As, Sb)Journal of the Physics Society Japan, 1990
- Hybridization gap inPhysical Review B, 1990
- Formation of an anisotropic energy gap in the valence-fluctuating system of CeNiSnPhysical Review B, 1990
- Mixed valence properties of YbB12Journal of Magnetism and Magnetic Materials, 1985
- Intermediate valence and the hybridization model: A study on SmB6, “gold” SmS and YbB12Journal of Magnetism and Magnetic Materials, 1985
- Energy bandstructure of YB12 and LuB12Journal of Magnetism and Magnetic Materials, 1985
- Rare-earth compounds with mixed valenciesPhilosophical Magazine, 1974
- Physical Properties of SmPhysical Review B, 1971