Mobility of copper centers in reverse-biased germanium junction diodes
- 15 July 1982
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (2) , 176-178
- https://doi.org/10.1063/1.93452
Abstract
The motion of copper centers in reverse‐biased germanium n+‐p junctions has been observed using deep level transient spectroscopy. The concentration profile of the doubly ionized copper center is presented as a function of the duration of the electric field application. A mobility of 9.0±4.8×10−12 cm2/Vs at 25 °C was obtained for the Cu2− center.Keywords
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