Elementary ambipolar field-effect transistor model
- 1 January 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (1) , 145-147
- https://doi.org/10.1109/t-ed.1986.22451
Abstract
An ambipolar FET can be operated alternatively in n-channel and p-channel modes. A simple conceptual model is proposed. It considers ohmic source and drain contacts, a gradual channel, and the depletion approximation.Keywords
This publication has 0 references indexed in Scilit: