Structural defect recovery in GaP after heavy ion implantation
- 1 June 1991
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 50 (1-4) , 169-172
- https://doi.org/10.1016/0169-4332(91)90158-g
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Lattice location of ion-implanted radioactive dopants in compound semiconductorsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- Localization of implanted radioactive probes by channeling of β−, β+ and conversion electronsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Mössbauer Study of a Complex 119Sn Impurity‐Defect in Gallium PhosphidePhysica Status Solidi (b), 1980
- Thermally stimulated current studies of radiation defects in GaP crystalsPhysica Status Solidi (a), 1980
- Identification of the Isolated Ga Vacancy in Electron-Irradiated GaP through EPRPhysical Review Letters, 1978