Resonant Tunneling into a Biased Fractional Quantum Hall Edge
- 19 March 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 86 (12) , 2645-2648
- https://doi.org/10.1103/physrevlett.86.2645
Abstract
We observe resonant tunneling into a voltage biased fractional quantum Hall effect (FQHE) edge, using atomically sharp tunnel barriers unique to cleaved-edge overgrown devices. The resonances demonstrate different tunnel couplings to the metallic lead and the FQHE edge. Weak coupling to the FQHE edge produces clear non-Fermi liquid behavior with a sixfold increase in resonance area under bias arising from the power law density of states at the FQHE edge. A simple device model uses the resonant tunneling formalism for chiral Luttinger liquids to successfully describe the data.Keywords
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