Temperature behavior of insulated gate transistor characteristics
- 1 March 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (3) , 289-297
- https://doi.org/10.1016/0038-1101(85)90009-7
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- The COMFET—A new high conductance MOS-gated deviceIEEE Electron Device Letters, 1983
- Temperature dependence of field-controlled thyristor characteristicsIEEE Transactions on Electron Devices, 1981
- Some electrical characteristics of a reverse conducting thyristorIEEE Transactions on Electron Devices, 1970
- Power Rectifiers and TransistorsProceedings of the IRE, 1952