Self-organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

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Abstract
In0.5Ga0.5As/GaAs (001) quantum dots (QDs) were grown by metalorganic chemical vapor deposition (MOCVD) on exactly (001) oriented substrates using the Stranski–Krastanow growth mode. The dot density and their relative geometrical arrangement are found to be strongly dependent on the substrate temperature. The dots have identical square shaped bases oriented along 〈100〉. For high densities a preferential relative alignment of the dots along the 〈110〉 directions is found. These dots tend to be arranged in a chainlike pattern with decreasing dot size towards the ends of the chains. From these observations the dot formation process for In0.5Ga0.5As quantum dots is suggested to be driven by energetics whereas the relative orientation is governed by kinetic effects.