A Scanning Electron Microscope Study of In[sub 1−x]Ga[sub x]P

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Abstract
A very precise sectioning technique for measuring concentration profiles in anodic tantalum oxide is based on the slow dissolution of the oxide in HF almost saturated with . Since many of the profiles to be measured were for radioactive isotopes incorporated by ion implantation, it was necessary to establish whether ion implantation had any effect on the technique. To this end, several stable isotopes were implanted at fluences up to 1017 ions/cm2. It was found that heavy ions gave rise to sputtering and accelerated the stripping of the oxide; by contrast, hydrogen ions gave no sputtering and decelerated the stripping. The accelerated stripping was attributed to the physical presence of the implanted ions, while the decelerated stripping may be due to the formation of hydrogen bonds between neighboring oxygen atoms in the oxide. When 1017 ions/cm2 of hydrogen were implanted, a carbonaceous deposit formed on the oxide surface due to the radiative polymerization of adsorbed pump oil molecules; this deposit prevented the oxide from dissolving at all. Implantations involving radioactive species were usually much less than 1015 ions/cm2, and the accelerated stripping was often negligible; when present, it had no effect on the profile measurements.

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