Liquid phase epitaxy of a new semiconductor AlGaInSb
- 13 May 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (10) , 407-408
- https://doi.org/10.1049/el:19820279
Abstract
A new semiconductor system in the quaternary group, AlxGayIn1−x−ySb has been prepared. The growth of bulk materials is very difficult because of the reactivity of Al and the segregation effects, but LPE methods were successfully applied to grow homogeneous and good-quality epitaxial layers onto InSb and GaSb.Keywords
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