Growth defects in GaN films on 6H–SiC substrates
- 6 May 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (19) , 2678-2680
- https://doi.org/10.1063/1.116279
Abstract
Lattice defects in GaN epilayers grown on 6H–SiC(0001) by metalorganic vapor phase epitaxy (MOVPE) have been characterized by transmission electron microscopy (TEM). The predominant defects in the film were threading dislocations and half‐loops with Burgers vectors 1/3〈112̄0〉, [0001], and 1/3〈112̄3〉. Planar faults were also observed in the film that are thought to be inversion domain boundaries (IDBs).Keywords
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