8.5 W CW 2.0 μm InGaAsP laser diodes

25 November 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (24) , 2112-2113
https://doi.org/10.1049/el:19931412

Abstract

Data are presented on strained-layer InGaAs/InGaAsP double quantum well laser diodes operating at 2.0 μm. A 200 μm broad area laser diode produces 1.1 W continuous wave (CW). The spectral full width at half maximum is 10 nm at 0.63 W CW and broadens to 17 nm at an output power of 1.03 W CW. A 1000 h lifetest is presented. A power of 8.5 W CW is achieved from a monolithic array of broad array laser diodes.

Keywords

OUTPUT POWER
MONOLITHIC ARRAY
STRAINED-LAYER INGAAS/INGAASP DOUBLE QUANTUM WELL LASER DIODES
1000 H
2.0 MICRON
CONTINUOUS WAVE
1.03 W
0.63 W
1.1 W
8.5 W
LIFETEST
200 MICRON
INGAAS-INGAASP
BROAD AREA LASER DIODE
SPECTRAL FULL WIDTH

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