High efficiency inversion layer solar cells on polycrystalline silicon by the application of silicon nitride
- 1 December 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 28 (12) , 1466-1469
- https://doi.org/10.1109/t-ed.1981.20631
Abstract
Plasma enhanced CVD silicon nitride is introduced for the fabrication of inversion layer solar cells on p-type polycrystalline silicon. The same high interface quality as obtained for Si-nitride on monocrystalline silicon could also be achieved for polycrystalline silicon. This includes high interface charge densities up to 6.6 × 1012cm-2and high UV sensitivity of the cells. For 4-cm2polycrystalline metal-insulator-semiconductor inversion layer (MIS/IL) solar cells active area efficiencies up to 13.4 percent (12.3-percent total area efficiency) under AM1 illumination could be reached, the highest values yet reported for polycrystalline silicon inversion layer solar cells on a total area basis. For the coprocessed MIS/IL cells on monocrystalline 0.7-ω. cm p-SiKeywords
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