Temperature Dependence of the Photoconductive Lifetime in N-Type Gallium Arsenide Diffused with Copper
- 1 September 1968
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 7 (9)
- https://doi.org/10.1143/jjap.7.1074
Abstract
Temperature dependence of the photoconductive lifetime has been studied in the temperature range 100°–360°K on n-type gallium arsenide partially compensated with copper. It is confirmed that in n-type gallium arsenide the electron lifetime is determined by the presence of two different levels: one is a recombination level at about the middle of the band gap and the other is an acceptor level near the valence band. The electron capture-cross-section of the acceptor level is estimated to be 10-22-2×10-23 cm2. From the magnitude of the hole capture-cross-section, the recombination level is presumed to be a donor.Keywords
This publication has 12 references indexed in Scilit:
- Measurements of Lifetime in GaAs DiodesJournal of Applied Physics, 1967
- Hall-Effect Levels Produced in Te-Doped GaAs Crystals by Cu DiffusionJournal of Applied Physics, 1967
- Recombination and Trapping Processes at Deep Centers in N-Type GaAsJapanese Journal of Applied Physics, 1967
- Scans in Measuring Wiener Spectra for Photographic GranularityJapanese Journal of Applied Physics, 1966
- Temperature Dependence of the Photoconductive Lifetime in n-Type Gallium ArsenideJapanese Journal of Applied Physics, 1966
- Growth of Gallium Arsenide Single Crystals by Free Surface MethodJapanese Journal of Applied Physics, 1963
- Precipitation of Copper in Gallium ArsenideJournal of Applied Physics, 1960
- Photoconductive and Photoelectromagnetic Lifetime Determination in Presence of Trapping. I. Small SignalsPhysical Review B, 1959
- Recombination Properties of Nickel in GermaniumPhysical Review B, 1959
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952