Ion plating in a system with a hot cathode

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Abstract
The plating material was heated and evaporated by an electron stream extracted from plasma. The substrate was continuously bombarded by ions extracted from plasma. It was stated that the boundary bias voltage of the crucible exists (e.g., 60 V for Cr) which initiates additional discharge between plasma and crucible. Vapor was intensively ionized in the plasma region. In the case of a grounded or floating substrate, the constant potential difference of 30–150 V between plasma and substrate was observed. Thus, no rf bias of a dielectric substrate was necessary. In the case of a conducting substrate, the effect of bombardment may be enhanced by a negative substrate bias voltage up to 500 V. The layers of Cu, Au, Pt, and Cr were deposited on alumina, silica glass, steel, and brass in Ar (4×10−2 Pa). The deposition rates were 1.2 μm/min for Cu, 0.4 μm/min for Pt, and 0.48 μm/min for Cr at 2 kW power dissipated in the crucible. The adhesion of obtained layers was good and their structure was columnar modified due to ion bombardment. The Cr layers showed structure A15 which is rather rarely obtained.

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