Time-resolved measurements of OH(v=1) vibrational relaxation on SiO2 surfaces: Isotope and temperature dependence

Abstract
Picosecond infrared spectroscopy was used to measure the vibrational energy relaxation time T1 of OH(v=1) and OD(v=1) groups chemisorbed on silica surfaces over the temperature range 100≤T≤800 K. The observed T1 times and their temperature dependencies are discussed in terms of a multiphonon relaxation mechanism. Limiting low temperature lifetimes are T1=220±20 ps (1σ) for OH(v=1) and T1=149±10 ps for OD(v=1).