Photo‐Induced Electron Spin Resonance (Photo‐ESR) in β‐Rhombohedral Boron

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Abstract
Photo‐induced ESR has been investigated in the temperature range 150 to 300 K using nearly homogeneous optical excitation (hv ≈︁ 1.3 eV). The relaxation of the photo‐ESR shows, similarly to that of photoconductivity, two components which are approximately described by a logarithmical function of time, decay rate being enhanced with increasing temperature. The time and temperature dependences of the photo‐ESR as well as the relationship between the photo‐ESR and photoconductivity are interpreted on the basis of a model, with traps for electrons having various values of emptying energy continuously distributed in a certain energy range and two kinds of localized valence states.