Diffusion and oxide viscous flow mechanism in SDB process and silicon wafer rapid thermal bonding
- 24 May 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (11) , 697-699
- https://doi.org/10.1049/el:19900455
Abstract
A relationship between bonding strength and bonding area has been found which suggests that the increase in bonding strength is caused by the bonding area increase in the oxidised silicon wafer direct bonding (SDB) process. The bonding area shows a saturation property with bonding time. Diffusion of various species existing in bonding interface region plays a key role in SDB process over different temperature. Viscous flow of the oxides completes bonding at T > 1050°C. A rapid thermal bonding (RTB) at 1200°C for 2min following 800°C for 2hr annealing realises complete bonding with little doping profile change in the system.Keywords
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